Title :
Temperature rise of transistor junctions due to two-dimensional current flow
Author :
Takagi, Kazuyoshi ; Mano, K.
Abstract :
The temperature rise of transistor junctions is analyzed by solving the two-dimensional thermal conduction equation. The result can be applied to determine the allowable current of the transistor, and it is shown that the allowable current is proportional to the minus one-quarter power of pulse duration at the high-current region.
Keywords :
Capacitance; Circuits; Current density; Impurities; Integral equations; Resistors; Temperature; Thermal conductivity; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.6057
