• DocumentCode
    893721
  • Title

    Perpendicular transport properties of a p-GaAs/δ-doped superlattice/n+-GaAs structure

  • Author

    Liu, W.C. ; Sun, C.Y. ; Guo, D.-F. ; Liu, R.-C.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
  • Volume
    140
  • Issue
    2
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    The perpendicular transport properties of a p-GaAs/δ-doped superlattice/n+-GaAs structure were studied at 300 and and 77 K. An interesting S-shaped negative differential resistance (NDR), resulting mainly from avalanche multiplications within the superlattice region, was observed at 300 K. A different multistate NDR phenomenon and an interesting hysteresis behaviour were found at 77 K. The multistate NDR is attributed to a sequential subavalanche multiplication process occurring within superlattice periods; holes created by avalanche multiplications play an important role in the transport properties. The hysteresis behaviour at 77 K seems to be caused by the heavily accumulated holes, which cannot react synchronously with the applied electric field
  • Keywords
    III-V semiconductors; gallium arsenide; impact ionisation; negative resistance; semiconductor superlattices; 300 K; 77 K; GaAs; S-shaped negative differential resistance; avalanche multiplications; heavily accumulated holes; hysteresis behaviour; multistate NDR phenomenon; perpendicular transport properties; sequential subavalanche multiplication process; superlattice region;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    212633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=893721