Title :
Large negative resistance in silicon p-i-n diodes at 300°K
Abstract :
Silicon p-π-n diodes have been fabricated which exhibit large negative resistance at room temperature. The ratio of threshold voltage to minimum voltage is as large as 400. The volt-ampere characteristic above breakdown shows near-exponential behavior.
Keywords :
Boron; Breakdown voltage; Charge carrier lifetime; Conductivity; Electric breakdown; Out of order; P-i-n diodes; Silicon; Temperature distribution; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.6059
