• DocumentCode
    893945
  • Title

    Reduction of the storage time of a transistor using a Schottky-barrier diode

  • Author

    Tada, Kazuki

  • Volume
    55
  • Issue
    11
  • fYear
    1967
  • Firstpage
    2064
  • Lastpage
    2065
  • Abstract
    A composite transistor consisting of a conventional transistor and a Schottky-barrier diode is proposed which has a very short saturation time constant τs0. The measured τs0of the composite transistor is reduced to ∼10 to 50 percent of that of the original transistor and is 1 ns at best.
  • Keywords
    Acceleration; Circuits; Clamps; Doping; Epitaxial growth; Frequency; Rail to rail outputs; Schottky diodes; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.6076
  • Filename
    1448006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=893945