Title :
Characterization of fundamental parameters of a semiconductor laser with an injected optical probe
Author :
Liu, J.M. ; Simpson, T.B.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
A simple technique using a direct optical probe is demonstrated for parasitic-free characterization of many intrinsic laser parameters, including the relaxation resonance frequency, the relaxation rate, the differential and nonlinear gain parameters, the linewidth enhancement factor, and the carrier and photon lifetimes. It consists of a single experimental setup and is broadly applicable to semiconductor lasers of different wavelengths and different dynamic bandwidths.<>
Keywords :
laser theory; nonlinear optics; semiconductor lasers; spectral line breadth; carrier lifetimes; differential gain parameters; direct optical probe; dynamic bandwidths; fundamental parameters; injected optical probe; intrinsic laser parameters; linewidth enhancement factor; nonlinear gain parameters; parasitic-free characterization; photon lifetimes; relaxation rate; relaxation resonance frequency; semiconductor laser; Bandwidth; Chirp modulation; Gain; Laser stability; Nonlinear optics; Optical modulation; Probes; Resonance; Resonant frequency; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
