DocumentCode
893998
Title
Simulation and interpretation of longitudinal-mode behavior in partly gain-coupled InGaAsP/InP multiquantum-well DFB lasers
Author
Li, G.P. ; Makino, T. ; Lu, H.
Author_Institution
Bell-Northern Res., Ottawa, Ont., Canada
Volume
5
Issue
4
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
386
Lastpage
389
Abstract
The unique longitudinal-mode behavior observed in 1.55- mu m InGaAsP/InP partly gain-coupled multiquantum-well distributed feedback (DFB) lasers has been simulated using a transfer-matrix analysis technique. Experimental results have been successfully reproduced and interpreted according to below-threshold calculation, results.<>
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser theory; semiconductor lasers; 1.55 micron; IR; InGaAsP-InP; MQW; below-threshold calculation; distributed feedback; longitudinal-mode behavior; multiquantum-well DFB lasers; partly gain-coupled; semiconductors; transfer-matrix analysis technique; Distributed feedback devices; Electrons; Fiber lasers; Indium gallium arsenide; Indium phosphide; Laser feedback; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.212673
Filename
212673
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