Title :
Simulation and interpretation of longitudinal-mode behavior in partly gain-coupled InGaAsP/InP multiquantum-well DFB lasers
Author :
Li, G.P. ; Makino, T. ; Lu, H.
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
fDate :
4/1/1993 12:00:00 AM
Abstract :
The unique longitudinal-mode behavior observed in 1.55- mu m InGaAsP/InP partly gain-coupled multiquantum-well distributed feedback (DFB) lasers has been simulated using a transfer-matrix analysis technique. Experimental results have been successfully reproduced and interpreted according to below-threshold calculation, results.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser theory; semiconductor lasers; 1.55 micron; IR; InGaAsP-InP; MQW; below-threshold calculation; distributed feedback; longitudinal-mode behavior; multiquantum-well DFB lasers; partly gain-coupled; semiconductors; transfer-matrix analysis technique; Distributed feedback devices; Electrons; Fiber lasers; Indium gallium arsenide; Indium phosphide; Laser feedback; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
