RF Power Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design

Author

King, Ming-Chu ; Chang, Tsu ; Chin, Albert

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

17

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

445

Lastpage

447

Abstract

This letter presents a new asymmetric-lightly-doped-drain (LDD) metal oxide semiconductor (MOS) transistor that is fully embedded in a CMOS logic without any process modification. The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE). The PAE is also improved by 16% at 10-dBm output power and 2.4 GHz. These significant improvements of RF power performance by this new MOS transistor make the RF-CMOS system-on-chip design a step further

Keywords

CMOS logic circuits; MOSFET; system-on-chip; CMOS logic; RF power performance; RF-CMOS SOC design; asymmetric-LDD MOS transistor; asymmetric-lightly-doped-drain MOS transistor; power-added efficiency; CMOS logic circuits; CMOS process; CMOS technology; FETs; Integrated circuit technology; Logic design; MOSFETs; Power generation; Power measurement; Radio frequency; Lightly-doped-drain (LDD); metal oxide semiconductor (MOS) transistor; metal oxide semiconductor field effect transistor (MOSFET); radio frequency (RF) power transistor;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.897796

Filename

4220702