Title :
RF Power Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design
Author :
King, Ming-Chu ; Chang, Tsu ; Chin, Albert
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
fDate :
6/1/2007 12:00:00 AM
Abstract :
This letter presents a new asymmetric-lightly-doped-drain (LDD) metal oxide semiconductor (MOS) transistor that is fully embedded in a CMOS logic without any process modification. The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE). The PAE is also improved by 16% at 10-dBm output power and 2.4 GHz. These significant improvements of RF power performance by this new MOS transistor make the RF-CMOS system-on-chip design a step further
Keywords :
CMOS logic circuits; MOSFET; system-on-chip; CMOS logic; RF power performance; RF-CMOS SOC design; asymmetric-LDD MOS transistor; asymmetric-lightly-doped-drain MOS transistor; power-added efficiency; CMOS logic circuits; CMOS process; CMOS technology; FETs; Integrated circuit technology; Logic design; MOSFETs; Power generation; Power measurement; Radio frequency; Lightly-doped-drain (LDD); metal oxide semiconductor (MOS) transistor; metal oxide semiconductor field effect transistor (MOSFET); radio frequency (RF) power transistor;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.897796
