Title :
1.5 mu m multiquantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain
Author :
Newkirk, M.A. ; Miller, B.I. ; Koren, U. ; Young, M.G. ; Chien, M. ; Jopson, R.M. ; Burrus, C.A.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
A multiquantum-well optical amplifier for 1.5- mu m wavelength operation using alternating tensile and compressively strained wells in the active region is described. For each bias level measured, the polarization sensitivity of the amplifier gain is 1 dB or less averaged over the gain bandwidth. This amplifier is suitable for integration with other optical devices in photonic integrated circuits which require polarization-independent gain.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light polarisation; semiconductor lasers; sensitivity; 1 dB; 1.5 micron; IR; InGaAs-InGaAsP; active region; amplifier gain; bias level; compressively strained wells; gain bandwidth; multiquantum-well semiconductor optical amplifier; optical devices; photonic integrated circuits; polarization sensitivity; polarization-independent gain; tensile strained wells; Bandwidth; Gain measurement; Integrated circuit measurements; Operational amplifiers; Optical amplifiers; Optical polarization; Optical sensors; Semiconductor optical amplifiers; Stimulated emission; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
