DocumentCode :
894235
Title :
The effects of an applied magnetic field on the oscillation of a silicon avalanche diode
Author :
Durney, C.H.
Volume :
55
Issue :
12
fYear :
1967
Firstpage :
2170
Lastpage :
2171
Abstract :
The observed effects of an applied magnetic dc field on the oscillation of a p-i-n CW silicon avalanche diode oscillating near 11 GHz at room temperature are described. Near oscillation threshold, the applied magnetic field increases the RF power output significantly and the frequency of oscillation slightly, but has little effect at higher output levels.
Keywords :
Diodes; Magnetic field measurement; Magnetic fields; Magnetic resonance; Magnetic separation; Power generation; Resistors; Silicon; Temperature; Waveguide transitions;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.6105
Filename :
1448035
Link To Document :
بازگشت