Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD

Author

Cockerill, T.M. ; Forbes, D.V. ; Han, H. ; Coleman, J.J.

Author_Institution

Mater Res. Lab., Illinois Univ., Urbana, IL, USA

Volume

5

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

448

Lastpage

450

Abstract

The monolithic integration of a strained layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by conventional atmospheric pressure metalorganic chemical vapor growth is discussed. Growth inhibition from a silicon dioxide mask is the mechanism used for selective-area growth rate enhancement. Variation in the width of the oxide stripe opening along the length of the device results in different quantum-well thicknesses, allowing the light generated in one selective growth region to propagate without significant absorption loss in an adjacent passive waveguide region.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; InGaAs-GaAs-AlGaAs; SiO/sub 2/ mask; VPE; absorption loss; atmospheric pressure metalorganic chemical vapor growth; growth inhibition; monolithic integration; oxide stripe width; passive waveguide; quantum-well thicknesses; selective area epitaxy; selective-area MOCVD; strained layer InGaAs-GaAs-AlGaAs quantum-well laser; Electrons; Epitaxial growth; Gallium arsenide; Monolithic integrated circuits; Optical polarization; Optical waveguides; Optimized production technology; Photonic band gap; Quantum well lasers; Tellurium;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.212695

Filename

212695