Title :
Fabrication and characterization of an In/sub 0.53/Ga/sub 0.47/As/InP photon transport transistor
Author :
Chu, A.K. ; Gigase, Y. ; Lee, H.Y. ; Hafich, M.J. ; Robinson, G. ; Van Zeghbroeck, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
A photon transport transistor fabricated using the lattice-matched In/sub 0.53/Ga/sub 0.47/As/InP material system is described. The device consists of a light emitting diode integrated on top of a photodiode, with very tight optical coupling between the two devices. The device behaves like a bipolar junction transistor except that photons rather than minority carriers are transported through the base region. The device fabricated has a voltage gain of 258 and a current gain of 0.07, yielding an electrical power gain of 18.1. The center wavelength emitted by the light emitting diode is at 1.55 mu m.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; p-i-n photodiodes; phototransistors; 1.55 micron; In/sub 0.53/Ga/sub 0.47/As-InP; MQW LED; N-i-p photodiode; OEIC; center wavelength; current gain; electrical power gain; fabrication; integration; lattice-matched In/sub 0.53/Ga/sub 0.47/As/InP material system; light emitting diode; photodiode; photon transport transistor; very tight optical coupling; voltage gain; Electronic circuits; Indium phosphide; Information processing; Light emitting diodes; Optical coupling; Optical device fabrication; Optical fiber communication; Photodiodes; Transistors; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
