Title :
A GaAs low-power normally-on 4-bit ripple carry adder
Author :
Perea, Ernesto H. ; Damay-Kavala, Fatma ; Nuzillat, Gérard ; Arnodo, Christian
fDate :
6/1/1983 12:00:00 AM
Abstract :
The realization and performance of a low-power buffered FET logic (1p-BFL) 4 bit ripple carry adder is reported. Performance measurements indicate a critical path average propagation delay of 1.9 ns at a total power dissipation of 45 mW, output buffers included (27 mW without). This corresponds to an average propagation delay of 380 ps/gate (FI/FO=/SUP 5///SUB 3/), an average power consumption of 1.56 mW/gate, and a power-delay product of 0.6 pJ. Best speed performance biasing conditions yield a 1.25 ns critical path average propagation delay at a total power dissipation of 180 mW (180 mW excluding buffers), which corresponds to an average gate delay, power consumption and power-delay product of 250 ps, 6 mW, and 1.5 pJ, respectively. Standard cell layout techniques yield an average gate density of 200 gates/mm/SUP 2/, interconnection wiring included.
Keywords :
Adders; Digital arithmetic; Digital integrated circuits; Field effect integrated circuits; III-V semiconductors; adders; digital arithmetic; digital integrated circuits; field effect integrated circuits; Adders; Circuit testing; Energy consumption; FETs; Gallium arsenide; Integrated circuit interconnections; Logic circuits; Power dissipation; Power measurement; Propagation delay;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1051953