• DocumentCode
    894429
  • Title

    A simple method for preparing "Sodium-free" thermally grown silicon dioxide on silicon

  • Author

    Cohen, Reuven ; Simonne, J.

  • Volume
    55
  • Issue
    12
  • fYear
    1967
  • Firstpage
    2193
  • Lastpage
    2195
  • Abstract
    A simple, reproducible MOS process requiring few steps and no elaborate equipment was developed. A surface charge density of 1 × 1011/cm2was obtained for 1000-Å thermal oxide on 〈100〉 10-ohm ċ cm p-type silicon chips after mounting and bonding. Stability results after temperature-bias test (3 min at 300°C with a field of 106V/cm) exhibited a flatband voltage shift of only -0.50 V.
  • Keywords
    Bonding; Charge carrier processes; Diodes; Doping; Electron devices; Electron mobility; Silicon compounds; Thermal stability; Thermal stresses; Velocity measurement;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.6124
  • Filename
    1448054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=894429