Title :
Design consideration of a static memory cell
Author :
Anami, Kenji ; Yoshimoto, Masahiko ; Shinohara, Hirofumi ; Hirata, Yoshihiro ; Nakano, Takao
fDate :
8/1/1983 12:00:00 AM
Abstract :
Describes design criteria for high-density low-power static RAM cells with a four-transistor two-resistor configuration. The states of the cell latch are expressed by a DC stability factor introduced from transfer curves of the inverters in the cell. The criteria use only static conditions for read/write/retain operations. The designed cell, considering mask-misalignment, measured 22.8×27.6 μm with 2.5 μm layout rules. From the evaluation of dynamic characteristics, it was shown that the 16K RAM using the cell had a sufficient operating margin.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; random-access storage; Circuits; Inverters; Latches; Random access memory; Read-write memory; Resistors; Semiconductor device measurement; Stability; Virtual manufacturing; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1051965
