Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs

Author

Tang, Wen-Bin ; Hsin, Yue-Ming

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taiwan, Taiwan

Volume

6

Issue

1

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

42

Lastpage

45

Abstract

The reversible breakdown walkout in the Si₃N₄ passivated AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) has been observed and investigated. Due to the double passivation processes, the fabricated PHEMTs demonstrated the reversible off-state breakdown walkout without changing device dc and RF performance significantly. This reversible breakdown behavior was induced by on-state stress. By repeating off-state and on-state stress, the breakdown voltages (V_Bs) eventually reached "stable region" or "reverse region" depending on the final stress process. A 2 V difference was observed between these two regions of breakdown.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device breakdown; semiconductor device reliability; AlGaAs-InGaAs; PHEMT passivation; RF performance; Si₃N₄; breakdown voltages; dc performance; double passivation process; off-state breakdown walkout; on-state stress; reverse region; reversible breakdown walkout; stable region; Electric breakdown; HEMTs; Indium gallium arsenide; MODFETs; Microwave transistors; PHEMTs; Passivation; Radio frequency; Stress; Wet etching; Breakdown walkout; off-state breakdown; passivation; pseudomorphic high-electron mobility transistors (PHEMTs);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.870345

Filename

1618653