DocumentCode
894639
Title
A high speed 16 kbit ECL RAM
Author
Toyoda, Kazuhiro ; Tanaka, Miki ; Isogai, Hideaki ; Ono, Chikai ; Kawabe, Yunosuke ; Goto, Hiroshi
Volume
18
Issue
5
fYear
1983
Firstpage
509
Lastpage
514
Abstract
A 16384 /spl times/ 1 bit ECL RAM (emitter coupled logic random access memory) with an access time of 15 ns and a power dissipation of 700 mW has been developed. The high packing density and performance were achieved by using a p-n-p load cell, a novel ECL circuit, and U-groove isolation. The test results proved that a p-n-p load cell is very effective in producing a fast high-density bipolar RAM having a capacity of over 64 Kbits.
Keywords
Bipolar integrated circuits; Emitter-coupled logic; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; bipolar integrated circuits; emitter-coupled logic; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; Circuit testing; Current supplies; Diodes; Flip-flops; Hardware; Parasitic capacitance; Power dissipation; Random access memory; Read-write memory; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1983.1051985
Filename
1051985
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