Title :
Control logic and cell design for a 4K NVRAM
Author :
Lee, Douglas J. ; Becker, Neil J. ; Schlafly, Andrew L. ; Skupnjak, Joseph A. ; Dham, Vinod K.
Abstract :
A high-density 4K 5-V-only nonvolatile static RAM has been designed using a wafer stepper HMOS I FLOTOX E/SUP 2/PROM technology. Normal SRAM read/write operations and parallel data transfer between SRAM and E/SUP 2/PROM array are possible. On-chip high-voltage regulation and generation, junction leakage control, and self-timing circuitry ensure full military temperature operation. Power-down store lockout protection and power-up automatic recall are featured.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; PROM; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; Automatic generation control; Circuits; DH-HEMTs; Latches; Logic design; Nonvolatile memory; Random access memory; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1051988
