Title :
A 288K CMOS EPROM with redundancy
Author :
Yoshida, Masanobu ; Higuchi, Mitsuo ; Miyasaka, Kiyoshi ; Shirai, Kazunari ; Tanaka, Izumi
Abstract :
A 150 ns 288K CMOS EPROM with a nine-block cell array and a standby current of less than 1 /spl mu/A has been developed. This device can be used as an 8 or 9-bit EPROM. The ninth block can be used as a redundant block by electrically programmable polysilicon fuses. A redundant row decoder is also included. Improvements in the lithography and process technologies have reduced the cell size to 9 /spl times/ 6 /spl mu/m and the chip size to 7.44 /spl times/ 4.65 mm.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; PROM; Redundancy; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; redundancy; Artificial intelligence; CMOS logic circuits; CMOS process; CMOS technology; Design automation; EPROM; Lithography; Packaging; Redundancy;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1051991
