DocumentCode
894717
Title
A high-speed ultra-low power 64K CMOS EPROM with on-chip test functions
Author
Knecht, Mark W. ; Manley, Martin H. ; Perasso, David C. ; Thomas, Jack F. ; Keshtbod, Parviz ; Tandan, Naresh ; Simmons, George H.
Volume
18
Issue
5
fYear
1983
Firstpage
554
Lastpage
561
Abstract
A 100 ns 8K /spl times/ 8 CMOS EPROM has been developed. Internal clock signals generated by address transition detection are used to reduce power consumption. As a result, power dissipation is less than 5 mW/MHz in the active mode, and less than 1 /spl mu/W in both the standby mode and the active quiescent mode (chip enabled, but no address transitions sensed). Three special test features incorporated in the design can be used to reduce the time required for final test and reliability screening.
Keywords
Field effect integrated circuits; Integrated circuit technology; Integrated circuit testing; Integrated memory circuits; Large scale integration; PROM; field effect integrated circuits; integrated circuit technology; integrated circuit testing; integrated memory circuits; large scale integration; CMOS process; CMOS technology; Circuit testing; Clocks; EPROM; MOS devices; Microprocessors; Power dissipation; Power generation; Signal generators;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1983.1051993
Filename
1051993
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