• DocumentCode
    894824
  • Title

    A novel NMOS E/sup 2/PROM scheme

  • Author

    Fang, Sheng

  • Volume
    18
  • Issue
    5
  • fYear
    1983
  • Firstpage
    610
  • Lastpage
    612
  • Abstract
    A new NMOS E/SUP 2/PROM scheme is proposed by which the conventional erase-then-write two-step byte write operation can be realized in one step. Only those bits that do not match the data to be written will be inverted.
  • Keywords
    Field effect integrated circuits; Integrated memory circuits; Large scale integration; PROM; field effect integrated circuits; integrated memory circuits; large scale integration; Capacitors; Charge pumps; Clocks; Impedance; Latches; Logic circuits; MOS devices; PROM; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1983.1052002
  • Filename
    1052002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=894824