Title :
A fast 16K static RAM built with a silicide enhanced NMOS process
Author :
Frederick, Bruce A.
Abstract :
A 25-ns 16K RAM is described which uses internal asynchronous precharging, a unique column buffer, and latching data lines. The NMOS technology features are 1.3 /spl mu/ L/SUB eff/, molybdenum silicide interconnect, and laser redundancy for yield enhancement.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Molybdenum compounds; Random-access storage; Redundancy; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; molybdenum compounds; random-access storage; redundancy; Breakdown voltage; CMOS technology; Decoding; Energy consumption; Fuses; Impedance; Integrated circuit interconnections; MOS devices; Silicides; Space technology;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1052003
