DocumentCode
894951
Title
Unipolar electroluminescence in GaAs by tunnel injection of minority carriers
Author
Ballantyne, J.M.
Volume
56
Issue
1
fYear
1968
Firstpage
115
Lastpage
116
Abstract
Electroluminescence in the 1.49-eV spectral region has been observed in n-type gallium-arsenide-insulator-metal structures under pulsed dc bias of proper polarity. The behavior of the luminescence with bias indicates that the light output is due to radiative recombination in the semiconductor of holes which are tunnel injected from the metal through the insulating film.
Keywords
Charge carrier processes; Crystals; Electrodes; Electroluminescence; Gallium arsenide; Insulation; Luminescence; Metal-insulator structures; Ohmic contacts; Tunneling;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6183
Filename
1448113
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