DocumentCode
895204
Title
A high performance 256K (512K) static ROM
Author
Fong, Edison ; Chang, Jiashann ; Tai, Wen Perng
Volume
18
Issue
6
fYear
1983
Firstpage
807
Lastpage
810
Abstract
A 256K ROM, fully expandable to 512K, has been fabricated. The ROM utilizes 2.5-/spl mu/m NMOS multiple threshold technology. It has a typical access time of 120 ns and uses push-pull circuitry to achieve an active current of 60 mA and a standby current of 1.9 mA. Total chip size is 39K mil/SUP 2/ for the 256K version. A modified X-cell has been chosen which requires 7.5 /spl mu/m. Current sensing was chosen to optimize access time.
Keywords
Field effect integrated circuits; Integrated memory circuits; Read-only storage; field effect integrated circuits; integrated memory circuits; read-only storage; CMOS technology; Circuits; Decoding; Inverters; MOS devices; Parasitic capacitance; Propagation delay; Read only memory; Silicon; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1983.1052036
Filename
1052036
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