Title :
A high performance 256K (512K) static ROM
Author :
Fong, Edison ; Chang, Jiashann ; Tai, Wen Perng
Abstract :
A 256K ROM, fully expandable to 512K, has been fabricated. The ROM utilizes 2.5-/spl mu/m NMOS multiple threshold technology. It has a typical access time of 120 ns and uses push-pull circuitry to achieve an active current of 60 mA and a standby current of 1.9 mA. Total chip size is 39K mil/SUP 2/ for the 256K version. A modified X-cell has been chosen which requires 7.5 /spl mu/m. Current sensing was chosen to optimize access time.
Keywords :
Field effect integrated circuits; Integrated memory circuits; Read-only storage; field effect integrated circuits; integrated memory circuits; read-only storage; CMOS technology; Circuits; Decoding; Inverters; MOS devices; Parasitic capacitance; Propagation delay; Read only memory; Silicon; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1052036
