DocumentCode :
895229
Title :
Effects of noise on transients of injection locked semiconductor lasers
Author :
Surette, Marc R. ; Hjelme, Dag Roar ; Ellingsen, Reinold ; Mickelson, Alan Rolf
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA
Volume :
29
Issue :
4
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
1046
Lastpage :
1063
Abstract :
Semiconductor laser injection locking transients are analyzed. By adiabatically eliminating the carrier dynamics, a single nonlinear stochastic differential equation is obtained for the relative phase between the master and slave lasors. The corresponding Fokker-Planck equation is used to study the steady-state locked conditions as well as phase transients of the locking process. Noise causes the steady-state relative phase between the master and the slave lasers to be a random variable with a standard deviation of approximately a few degrees for typical injection levels. The standard deviation can be reduced by using a phase detector with a limited bandwidth. The mean locking time in the presence of noise is slightly less than the deterministic prediction. Noise also causes the locked lasers to have a finite probability to momentarily unlock
Keywords :
electron device noise; laser theory; semiconductor lasers; Fokker-Planck equation; carrier dynamics; injection locked semiconductor lasers; master lasers; mean locking time; noise; phase detector; phase transients; semiconductor laser injection locking transients; single nonlinear stochastic differential equation; slave lasors; steady-state locked conditions; steady-state relative phase; Differential equations; Injection-locked oscillators; Laser noise; Master-slave; Nonlinear equations; Semiconductor device noise; Semiconductor lasers; Steady-state; Stochastic resonance; Transient analysis;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.214490
Filename :
214490
Link To Document :
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