Title :
Single-mode blue-violet laser diodes with low beam divergence and high COD level
Author :
Ryu, H.Y. ; Ha, K.H. ; Lee, S.N. ; Choi, K.K. ; Jang, T. ; Son, J.K. ; Chae, J.H. ; Chae, S.H. ; Paek, H.S. ; Sung, Y.J. ; Sakong, T. ; Kim, H.G. ; Kim, K.-S. ; Kim, Y.H. ; Nam, O.H. ; Park, Y.J.
Author_Institution :
Display Lab., Samsung Adv. Inst. of Technol., Suwon, South Korea
fDate :
5/1/2006 12:00:00 AM
Abstract :
We demonstrate GaN-based high-power single transverse-mode laser diodes (LDs) emitting at 405 nm. LD structures are designed to exhibit a high level of catastrophic optical damage and small beam divergence angle. By the control of refractive index profiles, we achieved a vertical beam divergence angle of as low as 17.5° and maximum output power of as high as 470 mW under continuous-wave operation condition. In addition, nearly fundamental transverse-mode operation is demonstrated up to 500-mW pulsed output power by far-field investigation.
Keywords :
III-V semiconductors; gallium compounds; laser beams; laser modes; refractive index; semiconductor lasers; 470 mW; 500 mW; GaN; GaN-based laser diodes; blue-violet laser diodes; catastrophic optical damage; continuous-wave operation; far-field investigation; high COD level; low beam divergence; pulsed output power; refractive index profiles; single-mode laser diodes; transverse-mode operation; vertical beam divergence angle; Diode lasers; Laser beams; Nonhomogeneous media; Optical devices; Optical materials; Optical refraction; Optical superlattices; Optical variables control; Power generation; Refractive index; (Al,In)GaN; Blu-ray disk (BD); catastrophic optical damage (COD); far field; laser diode (LD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.873540
