Infrared intraband laser induced in a multiple-quantum-well interband laser

Author

Kastalsky, A.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

29

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

1112

Lastpage

1115

Abstract

A multiple-quantum-well infrared laser with phonon energy ≃ 0.1 eV is proposed in which electrons, injected into the excited level of the quantum well, are efficiently removed from the ground state level by the interband stimulated process. High carrier injection is needed to provide population inversion between these levels. Analysis shows that low temperature operation of this laser is possible for both electrical and optical carrier injection. Quantum-well materials with lower electron effective mass, such as InGaAs and InAs, are preferable for these purposes

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; III-V semiconductors; InAs; InGaAs; electrical carrier injection; electron effective mass; excited level; ground state level; interband stimulated process; low temperature operation; multiple-quantum-well infrared laser; multiple-quantum-well interband laser; optical carrier injection; phonon energy; population inversion; quantum well materials; Effective mass; Electron optics; Land surface temperature; Laser excitation; Optical materials; Phonons; Quantum well devices; Quantum well lasers; Stationary state; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.214497

Filename

214497