Title :
Electrical Characterization of ZrO2/Si Interface Properties in MOSFETs With ZrO2 Gate Dielectrics
Author :
Liu, Chuan-Hsi ; Chiu, Fu-Chien
Author_Institution :
Dept. of Electron. Eng., Ming Chuan Univ., Taoyuan
Abstract :
MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS, IDS-VGS , and gated diode characteristics were analyzed to investigate the ZrO2/Si interface properties. The interface trap density (D it) was determined to be about 7.4times1012 cm -2middoteV-1 using subthreshold swing measurement. The surface-recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (tau 0,FIJ) measured from the gated diodes were about 3.5times10 3 cm/s and 2.6times10-6 s, respectively. The effective capture cross section of surface state (sigmas) was determined to be about 5.8times10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made
Keywords :
MOSFET; dielectric materials; high-k dielectric thin films; interface states; silicon; surface states; zirconium compounds; MOSFET; ZrO2-Si; electrical characterization; field-induced depletion region; gate dielectrics; high-K dielectrics; interface properties; interface trap density; minority carrier lifetime; subthreshold swing measurement; surface-recombination velocity; Annealing; Argon; Dielectrics; Diodes; MOSFETs; Photonic band gap; Radio frequency; Silicon; Sputtering; Wet etching; $hbox{ZrO}_{2}$; Gated diode; high-$kappa$ dielectrics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.887626
