• DocumentCode
    895360
  • Title

    Zero gate leakage current in the enhancement mode MOSFET

  • Author

    Negro, Vincent C.

  • Author_Institution
    U.S. Atomic Energy Commission, New York, N.Y.
  • Volume
    56
  • Issue
    2
  • fYear
    1968
  • Firstpage
    202
  • Lastpage
    202
  • Abstract
    Gate leakage current measurements of the enhancement mode MOSFET taken with a vibrating reed electrometer in a carefully controlled environment indicate that zero gate leakage current can be achieved. The zero region is delineated by the change of sign in the gate leakage current when the drain-to-source voltage is increased.
  • Keywords
    Bandwidth; Current measurement; Demodulation; Filters; Frequency modulation; Insulation life; Leakage current; MOSFET circuits; Testing; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6226
  • Filename
    1448156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895360