Title :
DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion
Author :
Chuanxin Lian ; Huili Xing ; Wang, C.S. ; McCarthy, L. ; Brown, D.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN
Abstract :
We have fabricated AlGaAs/GaAs/GaN heterojunction bipolar transistors (HBTs) formed by direct wafer fusion with different fusion temperatures. By employing a low wafer fusion temperature of 550 degC, current gains as high as ~9 and output currents as high as ~65 mA (emitter size of 100times120 mum2) were obtained. The effective minority carrier lifetime in the base was estimated to have decreased ~20 times due to the fusion process. In comparison, HBTs produced with higher wafer fusion temperatures (600 degC and 650 degC) exhibit lower current gains (~2-3) and higher base-collector leakage currents
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; wafer bonding; wide band gap semiconductors; 550 C; 600 to 650 C; AlGaAs-GaAs-GaN; HBT DC characteristics; direct wafer fusion; heterojunction bipolar transistors; minority carrier lifetime; Charge carrier lifetime; Etching; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; Lattices; MODFETs; Ohmic contacts; Temperature; Gallium arsenide; gallium nitride; heterojunction bipolar transistor (HBT); wafer fusion;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.887932
