Title :
CO2 laser induced photoeffects in silicon junctions
Author :
Sanz, F. Encinas ; Guerra Perez, J.M. ; Ferrari, E. Dominguez
Author_Institution :
Dept. de Opt., Univ. Complutense, Madrid, Spain
fDate :
4/1/1993 12:00:00 AM
Abstract :
CO2-laser-induced photovoltaic and photoconductive effects have been studied experimentally in silicon junctions. The response is slightly nonlinear or linear for the lower excitation intensities used, in opposition to the extremely nonlinear high-excitation-intensity regime. Abrupt changes in the slope of the growing response in the induced voltage pulsewidth and in the dependence on the junction temperature cause the difference in behavior. While the high-excitation-intensity response is strongly temperature dependent, the low excitation response is practically independent of the temperature
Keywords :
elemental semiconductors; p-n homojunctions; photoconductivity; photovoltaic effects; silicon; CO2; CO2 laser induced photoeffects; Si junction; induced voltage pulsewidth; junction temperature; linear response; lower excitation intensities; nonlinear high-excitation-intensity regime; photoconductive effects; photovoltaic effects; temperature dependent; Germanium; Laser excitation; Nonlinear optics; Optical pulses; Photovoltaic effects; Photovoltaic systems; Silicon; Solar power generation; Temperature dependence; Temperature sensors;
Journal_Title :
Quantum Electronics, IEEE Journal of
