• DocumentCode
    895457
  • Title

    CMOS RAM Cosmic-Ray-Induced-Error-Rate Analysis

  • Author

    Pickel, J.C. ; Blandford, J.T., Jr.

  • Author_Institution
    Rockwell International Science Center 3370 Miraloma Avenue Anaheim, California 92803
  • Volume
    28
  • Issue
    6
  • fYear
    1981
  • Firstpage
    3962
  • Lastpage
    3967
  • Abstract
    The methodology and results are presented for a detailed analysis to predict the galactic cosmic ray induced bit-error rate in three commercially availale CMOS RAM types. A summary of cyclotron simulation data is provided and utilization of the experimental results in the Cosmic Ray Induced Error Rate (CRIER) model is described.
  • Keywords
    Bit error rate; CMOS technology; Cyclotrons; Error analysis; Iron; Large scale integration; Read-write memory; Satellites; Space technology; Space vehicles;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4335656
  • Filename
    4335656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895457