DocumentCode :
895481
Title :
On the effect of mobility variation on MOS device characteristics
Author :
Frohman-Bentchkowsky, D.
Volume :
56
Issue :
2
fYear :
1968
Firstpage :
217
Lastpage :
218
Abstract :
An empirical approximation is used to predict the effect of surface-field dependent mobility on MOS device characteristics. Mobility dependence on both gate and drain voltages is considered. The approximation is verified by comparison with experimental device characteristics.
Keywords :
Acoustic waves; Attenuation; Delay lines; Electrons; Insertion loss; MOS devices; MOSFETs; Pulse amplifiers; Surface treatment; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1968.6239
Filename :
1448169
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=895481
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