Title :
A simple model for the determination of I/sup 2/L base current components
Author :
Möllmer, Frank ; Müller, Rüdiger
Abstract :
Assuming uniform impurity and mobility profiles and a trapezoidal minority carrier distribution a simple structure-oriented model for an upward-operated I/SUP 2/L n-p-n transistor has been derived which accurately describes its DC properties. Its validity is demonstrated with reference to some examples. With the aid of this model it is now possible to determine the various base current components by measuring the collector current I/SUB c/ (V/SUB be/), the base current I/SUB b/(V/SUB be/), and the recollection current I/SUB rec/(V/SUB be/) directly at the I/SUP 2/L gate without the need of special test structures.
Keywords :
Bipolar integrated circuits; Integrated logic circuits; Semiconductor device models; bipolar integrated circuits; integrated logic circuits; semiconductor device models; Current measurement; Electrons; Epitaxial layers; Impurities; Integrated circuit modeling; Space charge; Space technology; Spontaneous emission; Testing; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1052066
