DocumentCode :
895520
Title :
I/sup 2/L design in standard bipolar process
Author :
Flocke, Heiner H.
Volume :
13
Issue :
6
fYear :
1978
Firstpage :
914
Lastpage :
917
Abstract :
A calculation method for I/SUP 2/L gain parameters as a function of the design is presented. The small current gain of I/SUP 2/L inverters in a standard bipolar process is improved by inserting the shallow n/SUP +/-diffusion into the p-n-p base, thus providing for correct operation of four-collector devices. DC and AC characteristics are discussed.
Keywords :
Bipolar integrated circuits; Integrated logic circuits; bipolar integrated circuits; integrated logic circuits; Circuits; Equations; Frequency; Inductance; Page description languages; Power amplifiers; Radiofrequency amplifiers; Switches; Voltage; Wiring;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1978.1052070
Filename :
1052070
Link To Document :
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