Title :
Threshold Current for the Onset of Kirk Effect in Bipolar Transistors With a Fully Depleted Nonuniformly Doped Collector
Author :
van der Toorn, Ramses
Author_Institution :
NXP Res., Eindhoven
Abstract :
We derive a generalized expression for the threshold current of the Kirk effect (base widening) in bipolar transistors that have a fully depleted collector and a nonuniform dopant distribution in the collector. This generalized expression can be helpful to the analysis of the electrical characteristics, such as the cutoff frequency as a function of bias conditions, and hence to the optimization of such devices
Keywords :
bipolar transistors; semiconductor doping; Kirk effect; base widening; bipolar transistors; fully depleted nonuniformly doped collector; semiconductor device doping; semiconductor device modeling; threshold current; Bipolar transistors; Cutoff frequency; Electric variables; Genetic expression; Kirk field collapse effect; Neodymium; Semiconductor device doping; Semiconductor device modeling; Threshold current; Threshold voltage; Base widening; Kirk effect; bipolar transistors; doping; semiconductor device doping; semiconductor device modeling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.887936
