DocumentCode :
895531
Title :
Static negative resistance in avalanche diodes
Author :
Bowers, H.C.
Volume :
56
Issue :
2
fYear :
1968
Firstpage :
222
Lastpage :
224
Abstract :
At high current levels some diodes, when reverse-biased into avalanche, can exhibit a dc negative resistance. The diode parameters affecting this negative resistance and the frequency dependence of the resistance are discussed.
Keywords :
Charge carrier processes; Current density; Diodes; Doping profiles; Electric resistance; Electron mobility; Frequency; Ionization; Poisson equations; Space charge;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1968.6244
Filename :
1448174
Link To Document :
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