Low-Frequency Noise Characteristics in Strained-Si nMOSFETs

Author

Wang, Yen Ping ; Wu, San Lein ; Chang, Shoou Jinn

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

28

Issue

1

fYear

2007

Firstpage

36

Lastpage

38

Abstract

The low-frequency (LF) (1/f) noise mechanism of strained-Si nMOSFETs grown on relaxed Si_1-xGe_x virtual substrates (VSs) has been investigated. It is found that the Si-cap thickness plays an important role in characterizing the 1/f noise mechanism. Ge out-diffusion effect and slight strain relaxation in Si-cap layer are responsible for the degradation of 1/f noise in strained-Si device with 10- and 20-nm-thick Si-cap, respectively. In addition, by choosing proper Si-cap thickness, experimental result shows that as Si-cap undergoes stronger tensile strain for higher Ge concentration VS, the correlated mobility fluctuation term in the modified carrier-number fluctuation model is more dominated for the 1/f noise

Keywords

1/f noise; Ge-Si alloys; MOSFET; semiconductor device noise; 10 nm; 20 nm; SiGe; carrier-number fluctuation; low-frequency noise characteristics; out-diffusion effect; relaxed virtual substrates; slight strain relaxation; strained-Si nMOSFET; Capacitive sensors; Circuit noise; Fluctuations; Germanium silicon alloys; Low-frequency noise; MOSFETs; Rapid thermal processing; Silicon germanium; Tensile strain; Variable structure systems; Carrier-number fluctuation; low-frequency (LF) noise; strained-Si;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.887632

Filename

4039571