Title :
Resistive Switching Mechanism in ZnxCd1 − xS Nonvolatile Memory Devices
Author :
Wang, Zheng ; Griffin, Peter B. ; McVittie, Jim ; Wong, Simon ; McIntyre, Paul C. ; Nishi, Yoshio
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA
Abstract :
Nonvolatile information storage devices based on an abrupt resistance switch when an electric bias is applied are very attractive for future memory applications. Recently, such a resistance switch was described in ferroelectric ZnxCd1-xS, but the mechanism of switching remains controversial. Here, we present results that elucidate the mechanism, showing that a metal needs to be easily oxidized and is capable of diffusing into the ZnCdS film as a cation impurity forming a filamentary metallic conduction path
Keywords :
cadmium alloys; electrical resistivity; ferroelectric storage; positive ions; random-access storage; zinc alloys; ZnCdS; cation impurity; filamentary metallic conduction path; nonvolatile memory devices; resistive switching mechanism; Electric resistance; Electrodes; Ferroelectric materials; Metal-insulator structures; Nonvolatile memory; Random access memory; Sputtering; Switches; Switching circuits; Zinc; Chalcogenide; ZnCdS; nonvolatile memory; resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.887640
