Title :
Evaluation of RF Capacitance Extraction for Ultrathin Ultraleaky SOI MOS Devices
Author :
Yu, Chuanzhao ; Zhang, J. ; Yuan, J.S. ; Duan, F. ; Jayanarananan, S.K. ; Marathe, A. ; Cooper, S. ; Pham, V. ; Goo, J.-S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Central Florida Univ., Orlando, FL
Abstract :
This letter evaluates a radio-frequency (RF) method to extract the gate capacitance for SOI MOSFETs with ultrathin ultraleaky gate dielectrics. Conventional methods such as two-element and three-element methods using precision impedance analyzer were also compared. The RF method scans the RF capacitance data, assesses its lower and upper limits, and extracts the SOI gate capacitance accurately independent of gate oxide thickness
Keywords :
MIS devices; MOSFET; capacitance measurement; silicon-on-insulator; RF capacitance extraction; capacitance measurement; inversion oxide thickness; leakage current; precision impedance analyzer; ultrathin ultraleaky SOI MOS devices; Capacitance measurement; Contact resistance; Data mining; Dielectric substrates; Frequency measurement; Impedance; Leakage current; MOS devices; MOSFETs; Radio frequency; $S$-parameter; Capacitance measurement; inversion oxide thickness; leakage current; radio frequency (RF);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.886413
