Title :
Integrated Schottky-diode clamp for transistor storage time control
Author :
Chenette, E.R. ; Pedersen, R.A. ; Edwards, R.
Abstract :
Integration of a Schottky-diode antisaturation clamp with an n-p-n silicon transistor is described. The technique is compatible with beam-lead integrated circuit technology and offers an alternative to gold doping for storage time control.
Keywords :
Asymptotic stability; Capacitance; Clamps; Damping; Differential equations; Lagrangian functions; Schottky barriers; Schottky diodes; Silicon; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6252
