Title :
CW millimeter-wave IMPATT diodes with nearly abrupt junctions
Abstract :
Output powers of 23 to 150 mW were obtained from silicon avalanche diodes with a nearly abrupt junction in the 50- to 84-GHz range in continuous operation. The maximum efficiency was about 3 percent.
Keywords :
Current density; Diodes; Frequency; Genetic expression; Interference; Millimeter wave radar; Power generation; Silicon; Temperature distribution; Thermal resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6254
