• DocumentCode
    895627
  • Title

    Aging effects on bulk GaAs devices

  • Author

    Jaskolski, S.V. ; Ishii, Thomas Koryu

  • Volume
    56
  • Issue
    2
  • fYear
    1968
  • Firstpage
    236
  • Lastpage
    237
  • Abstract
    Degradation of bulk-effect GaAs devices, due to long-term use, was investigated. It was found that the frequency modes of oscillation and the volt-ampere characteristics were drastically changed due to prolonged use of the bulk-effect GaAs devices.
  • Keywords
    Aging; Anodes; Electric breakdown; Electromagnetic heating; Frequency; Gallium arsenide; Gunn devices; Microwave devices; Semiconductor diodes; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6255
  • Filename
    1448185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895627