Title :
Aging effects on bulk GaAs devices
Author :
Jaskolski, S.V. ; Ishii, Thomas Koryu
Abstract :
Degradation of bulk-effect GaAs devices, due to long-term use, was investigated. It was found that the frequency modes of oscillation and the volt-ampere characteristics were drastically changed due to prolonged use of the bulk-effect GaAs devices.
Keywords :
Aging; Anodes; Electric breakdown; Electromagnetic heating; Frequency; Gallium arsenide; Gunn devices; Microwave devices; Semiconductor diodes; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6255
