Title :
Monolithic 3-D silicon photonics
Author :
Koonath, Prakash ; Indukuri, Tejaswi ; Jalali, Bahram
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
fDate :
4/1/2006 12:00:00 AM
Abstract :
A monolithic CMOS compatible process has been developed to realize vertically integrated devices in silicon. The method involves the implantation of an oxygen into a patterned silicon substrate to form buried guiding structures. These buried devices are separated from a surface silicon layer by an intervening layer of silicon dioxide formed through the implantation process. Photolithography and etching is used to define devices on the surface silicon layer. The method has been utilized to realize the vertically coupled microdisk resonators and a variety of microresonator-based integrated optical elements. A new method for extraction of the unloaded Q of a cavity from its measured spectrum is also described.
Keywords :
CMOS integrated circuits; elemental semiconductors; etching; integrated optics; ion implantation; micromechanical resonators; photolithography; semiconductor doping; silicon; SiO2-Si; buried guiding structures; etching; integrated optical elements; monolithic 3D silicon photonics; monolithic CMOS compatible process; oxygen implantation; patterned silicon substrate; photolithography; vertically coupled microdisk resonators; Integrated optics; Optical coupling; Optical devices; Optical filters; Optical resonators; Optical surface waves; Optical waveguides; Photonics; Silicon; Stimulated emission; Cavity resonator filters; integrated optics; microresonators; monolithic integrated circuits; silicon-on-insulator (SOI) technology;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2006.871121
