Title :
A novel wide dynamic range silicon photodetector and linear imaging array
Author :
Chamberlain, Savvas G. ; Lee, Jim P Y
Abstract :
A silicon photodetector structure utilizing the MOSFET subthreshold effect is discussed. This photodetector, which can be integrated on the same chip with MOSFET circuits or CCDs, provides an analog voltage signal over a wide dynamic range. Photodetector and arrays showed, in the visible spectrum an incoming radiation-detection light-intensity dynamic range of greater than 10/SUP 7/. In addition, the photodetector device was used to realize CCD and self-scanned MOSFET linear arrays. The theory of the new photodetector device and its use in forming linear imaging arrays are discussed. Experimental results are presented.
Keywords :
Charge-coupled device circuits; charge-coupled device circuits; Capacitors; Charge coupled devices; Dynamic range; MOSFET circuits; Noise reduction; Photodetectors; Power supplies; Shift registers; Signal to noise ratio; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1984.1052084
