Title :
Bulk neuristor using the Gunn effect
Author :
Sugeta, T. ; Ikoma, Takashi ; Yanai, H.
Abstract :
The possibility of a bulk neuristor using bulk negative resistance effects, including the Gunn effect, is presented. The resemblance between the properties of the neuristor and of the Gunn-effect device is noted. T- and S-junctions of neuristors have been designed using Gunn-effect devices. All digital logic functions can be realized by the proposed bulk neuristor.
Keywords :
Anodes; Gallium arsenide; Gunn devices; Impurities; Logic arrays; Logic devices; Logic functions; Nerve fibers; Semiconductor diodes; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6259
