Title :
Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures
Author :
Lenahan, P.M. ; Brower, K.L. ; Dressendorfer, P.V. ; Johnson, W.C.
Author_Institution :
Sandia National Laboratories Albuquerque, New Mexico 87185
Abstract :
Electron spin resonance and capacitance versus voltage measurements demonstrate approximately a one-to-one correspondence between the density of radiation-induced trivalent silicon defects at the (111) Si-SiO2 interface and the density of radiation induced electronic interface states.
Keywords :
Annealing; Capacitance; Conductivity; Interface states; Ionizing radiation; Laboratories; Paramagnetic resonance; Photonic band gap; Silicon; Voltage measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4335683
