DocumentCode
895726
Title
Fault-tolerance considerations for redundant binary-tree-dynamic random-access-memory (RAM) chips
Author
Ciciani, Bruno
Author_Institution
Dept. of Electron. Eng., Rome II Univ., Italy
Volume
41
Issue
1
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
139
Lastpage
148
Abstract
The binary-tree-dynamic RAM (TRAM) architecture has been proposed to overcome the performance and testing time limits of the traditional architecture of memory chips. A 64-Mb prototype of this architecture is being built. The author investigates manufacturing yield and operational performance of redundant TRAMs with respect to variation of tree depth and redundancy level. For this purpose, a based chip area, a yield and operational performance figure of merit allowing the comparison of various choices, has been formulated and used. The yield is evaluated by a new Markov-chain-based model. The memory operational performance has been analyzed by an innovative technique that substitutes the notion of chip state at the end of the mission time with the cumulative work performed by the chip during the mission time (performability). Optimum values of three tree depth and redundancy level were found for a given RAM size, the adopted reconfiguration strategy, and the kinds of redundancy
Keywords
DRAM chips; Markov processes; circuit reliability; integrated circuit manufacture; redundancy; 64 Mbit; DRAM chips; Markov-chain-based model; TRAM; binary-tree-dynamic random-access-memory; fault-tolerance; figure of merit; manufacturing yield; mission time; operational performance; redundancy level; reliability; tree depth; Availability; Fault tolerance; Manufacturing; Memory architecture; Performance analysis; Random access memory; Read-write memory; Redundancy; Testing; Very large scale integration;
fLanguage
English
Journal_Title
Reliability, IEEE Transactions on
Publisher
ieee
ISSN
0018-9529
Type
jour
DOI
10.1109/24.126688
Filename
126688
Link To Document