Title :
A parametric short-channel MOS transistor model for subthreshold and strong inversion current
Author :
Grotjohn, Tim ; Hoefflinger, Bernd
Abstract :
The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.
Keywords :
Insulated gate field effect transistors; insulated gate field effect transistors; Capacitance; Circuit simulation; MOSFETs; Permittivity; Silicon; Subthreshold current; Surface resistance; Threshold voltage; Transconductance; Transistors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1984.1052093
