DocumentCode :
895739
Title :
An experimental method for the determination of the saturation point of a MOSFET
Author :
Booth, Richard V H ; White, Marvin H.
Volume :
19
Issue :
1
fYear :
1984
Firstpage :
113
Lastpage :
117
Abstract :
This paper presents an extraction technique which determines the drain voltages and currents at saturation directly from experimental data. The technique makes use of both drain current and conductance data. In addition to V/SUB DSS/ and I/SUB DSS/, parameters for the characterization of the saturation region may be extracted via this technique.
Keywords :
Characteristics measurement; characteristics measurement; CMOS digital integrated circuits; Data mining; Hydrogen; MOSFET circuits; Operational amplifiers; Power amplifiers; Power dissipation; Predictive models; Semiconductor device modeling; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1984.1052094
Filename :
1052094
Link To Document :
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