DocumentCode :
895759
Title :
Energy Losses and Mean Free Paths of Electrons in Silicon Dioxide
Author :
Ashley, J.C. ; Anderson, V.E.
Author_Institution :
Health and Safety Research Division Oak Ridge National Laboratory Oak Ridge, Tennessee 37380
Volume :
28
Issue :
6
fYear :
1981
Firstpage :
4131
Lastpage :
4136
Abstract :
Theoretical models and calculations are combined with experimental optical data to determine a model energy-loss function for SiO2. Sum-rule checks and comparisons with experimental information are made to insure overall consistency of the model. The model energy-loss function is employed to calculate electron inelastic mean free paths and stopping powers for electrons with energies ¿ 10 keV in SiO2.
Keywords :
Electron optics; Electronics industry; Energy exchange; Energy loss; Health and safety; Laboratories; Monte Carlo methods; Optical losses; Silicon compounds; Solid state circuits;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1981.4335688
Filename :
4335688
Link To Document :
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